In a PN junction diode with unequal doping concentrations, the depletion region extends more into the lightly doped side due to the charge neutrality condition (NA × XP = ND × XN), where higher doping concentration results in a thinner depletion width on that side. For example, when the P-side is lightly doped (10^15 atoms/cm³) and the N-side is heavily doped (10^18 atoms/cm³), the depletion width on the P-side is 1000 times wider than on the N-side.
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JEE Mains 2026 APR 5th Shift 2 Q45 p n Junction Depletion Region Option 2 #jeemain2026Added:
JEE Mains, 5th April 2026 shift 2.
Question 45.
This question deals with a PN junction diode with unequal doping concentrations.
Here is a PN junction.
The P side is lightly doped with 10 to the power 15 atoms per cm³ and the N side is heavily doped with 10 to the power 18 atoms per cm³. Notice how the depletion region extends much more into the lightly doped P side.
Here is the full question. In a semiconductor PN diode, the doping concentration on the P side is 10 to the 15 atoms per cm³ and on the N side is 10 to the 18 atoms per cm³. Which statement is true?
Option one, depletion widths on either side are equal.
Option two, depletion width is more on the P side.
Option three, depletion width is more on the N side. Option four, no depletion region forms.
The key concept is charge neutrality in the depletion region.
At the PN junction, the total charge exposed on the P side must equal the total charge on the N side. This gives us the condition NA * XP = ND * XN, where XP and XN are the depletion widths on the P and N sides, respectively. The depletion region always extends more into the lightly doped side.
Step one. Apply the charge neutrality condition. NA * XP = ND * XN.
Substituting 10 to the 15 * XP = 10 to the 18 * XN.
Step two.
Solving XP = 10 to the 18 / 10 to the 15 * XN, that is XP = 1,000 * XN.
The depletion width on the P side is a thousand times wider than on the N side.
The correct answer is option two. The depletion region width is more on the P side compared to the N side.
G tip, in a PN junction, always [clears throat] remember the depletion region extends more into the lightly doped side. This comes directly from the charge neutrality condition.
Also, higher doping means thinner depletion width on that side. This is a frequently asked concept in JEE semiconductors.
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